The undoped ZnO reveals narrow luminescence bands located close to fundamental absorption edge, known as near band luminescence (NBL) and defects related wide luminescence band within visible range of spectrum. NBL decay is in sub-nanosecond range and it is promising for fast scintillator development. However, the defects luminescence decay is in microsecond range and it is disturbing for fast scintillators. Dopants strongly change the luminescence properties, mainly the intensity and decay time and that is the cause for intense study of doped ZnO luminescence properties. Thus the study of luminescent properties of undoped ZnO and doped ZnO:Ga ceramics was carried out. The dependence of the radioluminescence intensity on temperature and spectrum of near band edge luminescence were examined. NBL spectra comparison of ZnO and ZnO:Ga ceramics with ZnO:Ga single crystal allowed drawn out that at 300 K the donor-acceptor pair luminescence is dominant. It was suggested that the reabsorption within band edge spectral region could significantly affected the near band luminescence intensity and spectral position at 300 K. The significant impact of gallium on the ZnO luminescence is observed. The decay kinetics of luminescence were studied in picosecond range and the two-stage luminescence decay was found for undoped ZnO. The fastest decay stage time is determined to be within 37 – 57 ps. One stage decay kinetics of NBL was determined for ZnO:Ga ceramic and decay time of 17 ps was estimated.
| Published in | Advances in Materials (Volume 9, Issue 4) |
| DOI | 10.11648/j.am.20200904.13 |
| Page(s) | 94-101 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
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Copyright © The Author(s), 2024. Published by Science Publishing Group |
ZnO, ZnO:Ga, Fast Luminescence, Decay kinetics, Radioluminescence, Scintillator
| [1] | Özgür, Ü., Alivov, Y. I., Liu, C., Teke, A., Reshchikov, M. A., Doǧan, S., et al. (2005) A comprehensive review of ZnO materials and devices. Journal of Applied Physics. 98 (4), 1–103. |
| [2] | Procházková, L., Gbur, T., Čuba, V., Jarý, V., and Nikl, M. (2015) Fabrication of highly efficient ZnO nanoscintillators. Optical Materials. 47 67–71. |
| [3] | Moezzi, A., McDonagh, A. M., and Cortie, M. B. (2012) Zinc oxide particles: Synthesis, properties and applications. Chemical Engineering Journal. 185–186 1–22. |
| [4] | Mishra, P. K., Mishra, H., Ekielski, A., Talegaonkar, S., and Vaidya, B. (2017) Zinc oxide nanoparticles: a promising nanomaterial for biomedical applications. Drug Discovery Today. 22 (12), 1825–1834. |
| [5] | Sharma, D. K., Shukla, S., Sharma, K. K., and Kumar, V. (2020) Materials Today : Proceedings A review on ZnO : Fundamental properties and applications. Materials Today: Proceedings. |
| [6] | Mičová, J., Buryi, M., Šimek, D., Drahokoupil, J., Neykova, N., Chang, Y. Y., et al. (2018) Synthesis of zinc oxide nanostructures and comparison of their crystal quality. Applied Surface Science. 461 190–195. |
| [7] | Luckey, D. (1968) A fast inorganic scintillator. Nuclear Instruments and Methods. 62 (1), 119–120. |
| [8] | Djuriić, A. B., Ng, A. M. C., and Chen, X. Y. (2010) ZnO nanostructures for optoelectronics: Material properties and device applications. Progress in Quantum Electronics. 34 (4), 191–259. |
| [9] | Berezovska, N. I., Gubanov, V. O., Dmitruk, I. M., and Biliy, M. M. (2003) Some peculiarities of exciton luminescence of zinc oxide single crystals and powders. Journal of Luminescence. 102–103 (SPEC), 434–437. |
| [10] | Meyer, B. K., Alves, H., Hofmann, D. M., Kriegseis, W., Forster, D., Bertram, F., et al. (2004) Bound exciton and donor-acceptor pair recombinations in ZnO. Physica Status Solidi (B) Basic Research. 241 (2), 231–260. |
| [11] | Lv, J., Li, C., and Chai, Z. (2019) Defect luminescence and its mediated physical properties in ZnO. Journal of Luminescence. 208 225–237. |
| [12] | Neal, J. S., Giles, N. C., Yang, X., Wall, R. A., Ucer, K. B., Williams, R. T., et al. (2008) Evaluation of melt-grown, ZnO single crystals for use as alpha-particle detectors. IEEE Transactions on Nuclear Science. 55 (3), 1397–1403. |
| [13] | Bourret-Courchesne, E. D., Derenzo, S. E., and Weber, M. J. (2009) Development of ZnO:Ga as an ultra-fast scintillator. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 601 (3), 358–363. |
| [14] | Charles Cooper, J., Koltick, D. S., Mihalczo, J. T., and Neal, J. S. (2003) Evaluation of ZnO (Ga) coatings as alpha particle transducers within a neutron generator. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 505 (1–2), 498–501. |
| [15] | Chernenko, K. A., Gorokhova, E. I., Eronko, S. B., Sandulenko, A. v., Venevtsev, I. D., Wieczorek, H., et al. (2018) Structural, Optical, and Luminescent Properties of ZnO:Ga and ZnO:In Ceramics. IEEE Transactions on Nuclear Science. 65 (8), 2196–2202. |
| [16] | Rodnyĭ, P. A., Khodyuk, I. v., Gorokhova, E. I., Mikhrin, S. B., and Dorenbos, P. (2008) Emission and excitation spectra of ZnO:Ga and ZnO:Ga, N ceramics. Optics and Spectroscopy (English Translation of Optika i Spektroskopiya). 105 (6), 908–912. |
| [17] | Derenzo, S. E., Weber, M. J., Bourret-Courchesne, E., and Klintenberg, M. K. (2003) The quest for the ideal inorganic scintillator. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 505 (1–2), 111–117. |
| [18] | Simpson, P. J., Tjossem, R., Hunt, A. W., Lynn, K. G., and Munné, V. (2003) Superfast timing performance from ZnO scintillators. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 505 (1–2), 82–84. |
| [19] | Ghanbari Shohany, B. and Khorsand Zak, A. (2020) Doped ZnO nanostructures with selected elements - Structural, morphology and optical properties: A review. Ceramics International. 46 (5), 5507–5520. |
| [20] | Wilkinson, J., Ucer, K. B., and Williams, R. T. (2004) Picosecond excitonic luminescence in ZnO and other wide-gap semiconductors. Radiation Measurements. 38 (4–6), 501–505. |
| [21] | Wilkinson, J., Ucer, K. B., and Williams, R. T. (2005) The oscillator strength of extended exciton states and possibility for very fast scintillators. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 537 (1-2 SPEC. ISS.), 66–70. |
| [22] | Xiong, G., Ucer, K. B., Williams, R. T., Lee, J., Bhattacharyya, D., Metson, J., et al. (2005) Donor-acceptor pair luminescence of nitrogen-implanted ZnO single crystal. Journal of Applied Physics. 97 (4). |
| [23] | Li, Q., Liu, X., Gu, M., Huang, S., Zhang, J., Ni, C., et al. (2016) X-ray excited luminescence of Ga- and In-doped ZnO microrods by annealing treatment. Superlattices and Microstructures. 98 351–358. |
| [24] | Kano, M., Wakamiya, A., Sakai, K., Yamanoi, K., Cadatal-Raduban, M., Nakazato, T., et al. (2011) Response-time-improved ZnO scintillator by impurity doping. Journal of Crystal Growth. 318 (1), 788–790. |
| [25] | Grigorjeva, L., Grube, J., Bite, I., Zolotarjovs, A., Smits, K., Millers, D., et al. (2019) Sub-nanosecond excitonic luminescence in ZnO:In nanocrystals. Radiation Measurements. 123 (February), 69–73. |
| [26] | Rodnyi, P. A., Mikhrin, S. B., Mishin, A. N., and Sidorenko, A. v. (2001) Small-size pulsed X-ray source for measurements of scintillator decay time constants. IEEE Transactions on Nuclear Science. 48 (6 II), 2340–2343. |
| [27] | Demidenko, V. A., Gorokhova, E. I., Khodyuk, I. v., Khristich, O. A., Mikhrin, S. B., and Rodnyi, P. A. (2007) Scintillation properties of ceramics based on zinc oxide. Radiation Measurements. 42 (4–5), 549–552. |
| [28] | Meyer, B. K., Sann, J., Hofmann, D. M., Neumann, C., and Zeuner, A. (2005) Shallow donors and acceptors in ZnO. Semiconductor Science and Technology. 20 (4). |
| [29] | Muktepavela, F., Maniks, J., Grigorjeva, L., Zabels, R., Rodnyi, P., and Gorokhova, E. (2018) Effect of in Doping on the ZnO Powders Morphology and Microstructure Evolution of ZnO:In Ceramics as a Material for Scintillators. Latvian Journal of Physics and Technical Sciences. 55 (6), 35–42. |
| [30] | Lu, K. (2008) Sintering of nanoceramics. International Materials Reviews. 53 (1), 21–38. |
| [31] | Vorobyeva, N., Rumyantseva, M., Filatova, D., Konstantinova, E., Grishina, D., Abakumov, A., et al. (2013) Nanocrystalline ZnO (Ga): Paramagnetic centers, surface acidity and gas sensor properties. Sensors and Actuators, B: Chemical. 182 (2013), 555–564. |
| [32] | Cuscó, R., Alarcón-Lladó, E., Ibáñez, J., Artús, L., Jiménez, J., Wang, B., et al. (2007) Temperature dependence of Raman scattering in ZnO. Physical Review B - Condensed Matter and Materials Physics. 75 (16), 1–11. |
| [33] | Demangeot, F., Paillard, V., Chassaing, P. M., Pagès, C., Kahn, M. L., Maisonnat, A., et al. (2006) Experimental study of LO phonons and excitons in ZnO nanoparticles produced by room-temperature organometallic synthesis. Applied Physics Letters. 88 (7), 2–5. |
| [34] | Das, D. and Mondal, P. (2016) Low temperature grown ZnO:Ga films with predominant c-axis orientation in wurtzite structure demonstrating high conductance, transmittance and photoluminescence. RSC Advances. 6 (8), 6144–6153. |
| [35] | Mondal, P. and Das, D. (2016) Effect of hydrogen in controlling the structural orientation of ZnO:Ga:H as transparent conducting oxide films suitable for applications in stacked layer devices. Physical Chemistry Chemical Physics. 18 (30), 20450–20458. |
| [36] | Makino, T., Segawa, Y., Yoshida, S., Tsukazaki, A., Ohtomo, A., and Kawasaki, M. (2004) Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga. Applied Physics Letters. 85 (5), 759–761. |
APA Style
Donats Millers, Larisa Grigorjeva, Aleksejs Zolotarjovs, Faina Muktepavela, Jurgis Grube, et al. (2020). ZnO and ZnO:Ga Ceramics for Advanced Scintillators. Advances in Materials, 9(4), 94-101. https://doi.org/10.11648/j.am.20200904.13
ACS Style
Donats Millers; Larisa Grigorjeva; Aleksejs Zolotarjovs; Faina Muktepavela; Jurgis Grube, et al. ZnO and ZnO:Ga Ceramics for Advanced Scintillators. Adv. Mater. 2020, 9(4), 94-101. doi: 10.11648/j.am.20200904.13
AMA Style
Donats Millers, Larisa Grigorjeva, Aleksejs Zolotarjovs, Faina Muktepavela, Jurgis Grube, et al. ZnO and ZnO:Ga Ceramics for Advanced Scintillators. Adv Mater. 2020;9(4):94-101. doi: 10.11648/j.am.20200904.13
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Download@article{10.11648/j.am.20200904.13,
author = {Donats Millers and Larisa Grigorjeva and Aleksejs Zolotarjovs and Faina Muktepavela and Jurgis Grube and Agnese Spustaka and Piotr Rodnyi and Ivan Venevtsev and Elena Gorokhova},
title = {ZnO and ZnO:Ga Ceramics for Advanced Scintillators},
journal = {Advances in Materials},
volume = {9},
number = {4},
pages = {94-101},
doi = {10.11648/j.am.20200904.13},
url = {https://doi.org/10.11648/j.am.20200904.13},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.am.20200904.13},
abstract = {The undoped ZnO reveals narrow luminescence bands located close to fundamental absorption edge, known as near band luminescence (NBL) and defects related wide luminescence band within visible range of spectrum. NBL decay is in sub-nanosecond range and it is promising for fast scintillator development. However, the defects luminescence decay is in microsecond range and it is disturbing for fast scintillators. Dopants strongly change the luminescence properties, mainly the intensity and decay time and that is the cause for intense study of doped ZnO luminescence properties. Thus the study of luminescent properties of undoped ZnO and doped ZnO:Ga ceramics was carried out. The dependence of the radioluminescence intensity on temperature and spectrum of near band edge luminescence were examined. NBL spectra comparison of ZnO and ZnO:Ga ceramics with ZnO:Ga single crystal allowed drawn out that at 300 K the donor-acceptor pair luminescence is dominant. It was suggested that the reabsorption within band edge spectral region could significantly affected the near band luminescence intensity and spectral position at 300 K. The significant impact of gallium on the ZnO luminescence is observed. The decay kinetics of luminescence were studied in picosecond range and the two-stage luminescence decay was found for undoped ZnO. The fastest decay stage time is determined to be within 37 – 57 ps. One stage decay kinetics of NBL was determined for ZnO:Ga ceramic and decay time of 17 ps was estimated.},
year = {2020}
}
TY - JOUR T1 - ZnO and ZnO:Ga Ceramics for Advanced Scintillators AU - Donats Millers AU - Larisa Grigorjeva AU - Aleksejs Zolotarjovs AU - Faina Muktepavela AU - Jurgis Grube AU - Agnese Spustaka AU - Piotr Rodnyi AU - Ivan Venevtsev AU - Elena Gorokhova Y1 - 2020/12/22 PY - 2020 N1 - https://doi.org/10.11648/j.am.20200904.13 DO - 10.11648/j.am.20200904.13 T2 - Advances in Materials JF - Advances in Materials JO - Advances in Materials SP - 94 EP - 101 PB - Science Publishing Group SN - 2327-252X UR - https://doi.org/10.11648/j.am.20200904.13 AB - The undoped ZnO reveals narrow luminescence bands located close to fundamental absorption edge, known as near band luminescence (NBL) and defects related wide luminescence band within visible range of spectrum. NBL decay is in sub-nanosecond range and it is promising for fast scintillator development. However, the defects luminescence decay is in microsecond range and it is disturbing for fast scintillators. Dopants strongly change the luminescence properties, mainly the intensity and decay time and that is the cause for intense study of doped ZnO luminescence properties. Thus the study of luminescent properties of undoped ZnO and doped ZnO:Ga ceramics was carried out. The dependence of the radioluminescence intensity on temperature and spectrum of near band edge luminescence were examined. NBL spectra comparison of ZnO and ZnO:Ga ceramics with ZnO:Ga single crystal allowed drawn out that at 300 K the donor-acceptor pair luminescence is dominant. It was suggested that the reabsorption within band edge spectral region could significantly affected the near band luminescence intensity and spectral position at 300 K. The significant impact of gallium on the ZnO luminescence is observed. The decay kinetics of luminescence were studied in picosecond range and the two-stage luminescence decay was found for undoped ZnO. The fastest decay stage time is determined to be within 37 – 57 ps. One stage decay kinetics of NBL was determined for ZnO:Ga ceramic and decay time of 17 ps was estimated. VL - 9 IS - 4 ER -
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