Volume 5, Issue 4, August 2016, Page: 18-22
Kinetic Analysis of Crystallization Processes in In60Se40 Thin Films for Phase Change Memory (Pram) Applications
Irene W. Muchira, Department of Electrical and Electronics Engineering, Kirinyaga University College, Kerugoya, Kenya
Walter K. Njoroge, Department of Physics, Kenyatta University, Nairobi, Kenya
Patrick M. Karimi, Institute of Energy Studies and Research, Nairobi, Kenya
Received: Jun. 23, 2016;       Accepted: Jul. 7, 2016;       Published: Jul. 28, 2016
DOI: 10.11648/j.am.20160504.11      View  3081      Downloads  81
Abstract
In the present work, a systematic investigation of crystallization kinetics of In60Se40 alloy has been made. Thin films of In60Se40 alloy were prepared by thermal evaporation using Edward Auto 306 evaporation system. Electrical measurements at room temperature and upon annealing at different heating rates were done by four point probe method using Keithley 2400 source meter interfaced with computer using Lab View software. The dependence of sheet resistance on temperature showed a sudden drop in resistance at a specific temperature corresponding to the transition temperature at which the alloy change from amorphous to crystalline. The transition temperature was also found to increase with the heating rates. From the heating rate dependence of peak crystallization temperature (Tp) the activation energy for crystallization was determined using the Kissinger analysis. The films were found to have an electrical contrast of about six orders of magnitude between the as-deposited and the annealed states, a good quality for PRAM applications. The activation energies were determined to be 0.354 ± 0.018 eV.
Keywords
Chalcogenide Materials, Phase Change Memory, Crystallization Temperature, Transition Temperature
To cite this article
Irene W. Muchira, Walter K. Njoroge, Patrick M. Karimi, Kinetic Analysis of Crystallization Processes in In60Se40 Thin Films for Phase Change Memory (Pram) Applications, Advances in Materials. Vol. 5, No. 4, 2016, pp. 18-22. doi: 10.11648/j.am.20160504.11
Copyright
Copyright © 2016 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Reference
[1]
Aggarwal I. D, and Sanghera J. S.(2002) Development and applications of chalcogenide glass optical fibers. Journal of Optoelectronics and Advanced Materials 4: 665-678.
[2]
Asokan, S. Prasad, M. V. N. Parthasarathy G and Gopal E. S. R. (1989), Mechanical and chemical thresholds in IV-VI chalcogenide glasses, Physics Review Letters 62: 808.
[3]
Balasubramanian S. and Rao, K. J. (1994). A molecular dynamics study of atomic correlations in glassy B2S3, Journal of Physical Chemistry 98: 9216-9221.
[4]
Burr, G. W., Breitwisch, M. J., Francheschini, M., Garetto, D., Goparakrishna, K., Jackson, B., Kurdi, B., Lam, C., Lastras, L. A., Padilla, A., Rajidan, B., Raoux, S. and Shenoy, R. S. (2010). “Phase change memory technology”. Journal of Vacuum Science and Technology 28: 223-262.
[5]
Chung, K. M., Wamwangi, D., Woda, M., Wuttig, M. and Bensch W. (2008). Investigation of SnSe, SnSe2 and Sn2Se3 alloys for phase change memory application. Journal of Applied Physics 10 (8): 083523.
[6]
Friedrich, I., Weidenhof, V., Njoroge, W., Franz, P. and Wuttig, M., (2000). Structural transformation of Ge2Sb2Te5 films studied by electrical resistance measurements. Journal of applied physics 87: 4130-4134.
[7]
Kolobov, A. V., Fons, P., Tominaga, J., Frenkel, A. I., Ankudinov, A. I., Yannopoulos, S. N., Andrikopoulos, K. S. and Uruga, p. (2005). Why phase media are fast and stable: A new approach to an old problem, Japanese Journal of Applied Physics 44: 3345-3349.
[8]
Kumar J, Ahmad M., Chander R, Thangaraj R, and Sathiaraj T. S. (2008) Phase segregation in Pb: GeSbTe chalcogenide system The European Physical Journal Applied Physics 41: 13.
[9]
Lathrop D. and Eckert, H.(1989). Chemical Disorder in Non-Oxide Chalcogenide Glasses. Site Speciation in the System Phosphorus-Selenium by Magic Angle Spinning NMR at Very High Spinning Speeds Journal of Physical Chemistry 93: 7895-7902.
[10]
Rao K. J. and Mohan R.(1980) Glass transition in As Se glasses, Journal of Physical Chemistry 84: 1917.
[11]
Shukla, R., Agarwal, P. and Kumar, A. (2010). Crystallization kinetics in glassy Se100-xInx system using iso-conversional methods. Chalcogenide letters. 7: 249-255.
[12]
Suri N, Bindra K, and Thangaraj R. (2006) Electrical conduction and photoconduction in Se80-xTe20Bix thin films Journal of Physics: Condensed Matter 18: 9129.
[13]
Tanaka K, (1989) Structural phase transitions in chalcogenide glasses. Physical Review B 39: 1270.
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