Volume 9, Issue 4, December 2020, Page: 94-101
ZnO and ZnO:Ga Ceramics for Advanced Scintillators
Donats Millers, Institute of Solid State Physics, University of Latvia, Riga, Latvia
Larisa Grigorjeva, Institute of Solid State Physics, University of Latvia, Riga, Latvia
Aleksejs Zolotarjovs, Institute of Solid State Physics, University of Latvia, Riga, Latvia
Faina Muktepavela, Institute of Solid State Physics, University of Latvia, Riga, Latvia
Jurgis Grube, Institute of Solid State Physics, University of Latvia, Riga, Latvia
Agnese Spustaka, Institute of Solid State Physics, University of Latvia, Riga, Latvia
Piotr Rodnyi, Experimental Physics Department, Peter the Great Saint Petersburg Polytechnic University, Saint-Petersburg, Russia
Ivan Venevtsev, Experimental Physics Department, Peter the Great Saint Petersburg Polytechnic University, Saint-Petersburg, Russia
Elena Gorokhova, Vavilov State Optical Institute, Saint Petersburg, Russia
Received: Nov. 24, 2020;       Accepted: Dec. 8, 2020;       Published: Dec. 22, 2020
DOI: 10.11648/j.am.20200904.13      View  46      Downloads  48
Abstract
The undoped ZnO reveals narrow luminescence bands located close to fundamental absorption edge, known as near band luminescence (NBL) and defects related wide luminescence band within visible range of spectrum. NBL decay is in sub-nanosecond range and it is promising for fast scintillator development. However, the defects luminescence decay is in microsecond range and it is disturbing for fast scintillators. Dopants strongly change the luminescence properties, mainly the intensity and decay time and that is the cause for intense study of doped ZnO luminescence properties. Thus the study of luminescent properties of undoped ZnO and doped ZnO:Ga ceramics was carried out. The dependence of the radioluminescence intensity on temperature and spectrum of near band edge luminescence were examined. NBL spectra comparison of ZnO and ZnO:Ga ceramics with ZnO:Ga single crystal allowed drawn out that at 300 K the donor-acceptor pair luminescence is dominant. It was suggested that the reabsorption within band edge spectral region could significantly affected the near band luminescence intensity and spectral position at 300 K. The significant impact of gallium on the ZnO luminescence is observed. The decay kinetics of luminescence were studied in picosecond range and the two-stage luminescence decay was found for undoped ZnO. The fastest decay stage time is determined to be within 37 – 57 ps. One stage decay kinetics of NBL was determined for ZnO:Ga ceramic and decay time of 17 ps was estimated.
Keywords
ZnO, ZnO:Ga, Fast Luminescence, Decay kinetics, Radioluminescence, Scintillator
To cite this article
Donats Millers, Larisa Grigorjeva, Aleksejs Zolotarjovs, Faina Muktepavela, Jurgis Grube, Agnese Spustaka, Piotr Rodnyi, Ivan Venevtsev, Elena Gorokhova, ZnO and ZnO:Ga Ceramics for Advanced Scintillators, Advances in Materials. Vol. 9, No. 4, 2020, pp. 94-101. doi: 10.11648/j.am.20200904.13
Copyright
Copyright © 2020 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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